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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  2. Very Large Area Microchannel Plate Neutron Detectors

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: 18a

    NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

    STTR Phase I 2011 Department of Energy
  3. Development of High Current 2G High Temperature Superconductor Cabling Technology

    SBC: Supercon, Inc.            Topic: 66c

    Future magnets for Fusion Energy Systems require superconducting cables with improved high critical current carrying capacity at high magnetic fields, 20 Kelvin operation, low AC losses and lower cost. A new method of fabricating a high current cable with 2G HTS tapes has been developed that will improve the engineering current density achievable. Commercial Applications and Other Benefits: Fut ...

    STTR Phase II 2011 Department of Energy
  4. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: SCIENCE RESEARCH LABORATORY, INC            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  10. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

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