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Award Data
The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.
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Very Large Area Microchannel Plate Neutron Detectors
SBC: NOVA SCIENTIFIC INCORPORATED Topic: 18aNOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...
STTR Phase I 2011 Department of Energy -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
A Tunable Interferometric Random Optical Cross-Switch
SBC: Scientific Solutions, Inc. Topic: N/AA random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Novel heterojunction diodes for High Power Electronics
SBC: VIATRONIX Topic: N/AThe wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
In-Line Trona Fiber-Optic Raman System
SBC: Detection Limit, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Bottoms-Up In-Situ Vitrification of Hard-to-Treat Buried Mixed Wastes
SBC: RESODYN CORPORATION Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Adaptive Daylighting Control System
SBC: Orion Engineering Company Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
Improved Sampling Probe for Ammonia Measurement
SBC: Physical Sciences Inc. Topic: N/AN/A
STTR Phase I 1999 Department of Energy