Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Very Large Area Microchannel Plate Neutron Detectors

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: 18a

    NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

    STTR Phase I 2011 Department of Energy
  2. Better GaN substrates through HVPE on bulk AlN substrates

    SBC: Crystal IS, Inc.            Topic: N/A

    Single-crystal aluminum nitride substrates will be used for epitaxial growth of GaN by hydride vapor phase epitaxy (HVPE). The relatively close match in crystal structure, in chemical compatibility, and in thermal expansion should allow much high quality(and much thicker) GaN layers to be grown. HVPE will allow these GaN epitaxial layers to grown cost effectively.Extremely high power microwave ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Narrow-linewidth, Sol-Gel Glass/Photopolymer Holographic Filter Technology

    SBC: HYBRID TECHNOLOGIES            Topic: N/A

    Hybrid Technologies (HT, Amherst, NY) in cooperation with the Institute for Lasers, Photonics and Biophotonics (ILPB) at the State University of New York at Buffalo proposes to develop new bulk glass-photopolymer materials and investigate the feasibilityof using them for high efficiency, permanent, highly wavelength selective holographic gratings needed for Dense Wavelength Division Multiplexing ( ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Integrated Remanufacturing/Materials Recovery Process for Optimum Recycling of Plastics

    SBC: Product Remanufacturing Centers Inc            Topic: N/A

    In the remanufacturing industry (for example the remanufacture of floor care products such as vacuum cleaners) the integration of cost-effective materials recovery technology would provide for the optimum recycling of plastics. Presently, reject plastic parts that cannot be re-used in remanufactured products are disposed. This project will demonstrate the commercial viability of an integrated re ...

    STTR Phase I 2001 Department of Energy
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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