Award Data

NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

Optical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...

Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

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