Award Data

NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

This project will develop an enzyme-catalyzed, contained liquid membrane reactor for removal of CO2 from natural gas. The membrane will be capable of achieving both high flux and high separation factor while reducing fouling. This is a specific example of the enrichment of a dilute gas stream. Ultimately, a biomimetically derived membrane will be capable of selectively removing CO2 from mixed g ...

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

RJM Semiconductor and NASA JPL propose to demonstrate the world's fastest InP transistor technology with cut-off frequencies approaching 1TeraHertz combined with the essential device reliability required for real systems deployment. The approach will adopta new patent-pending Self-Aligned HBT Process invented at RJM Semiconductor that employs stable, non-diffusing Carbon-doped bases, high breakdow ...

A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

Nanoparticle-dispersed engine coolants would have excellent heat transfer properties due in part to the much higher thermal conductivity of solids relative to liquids. Micron size particles cannot be used for this application because of problems associated with reduced solid-liquid interfacial area, wear and erosion, and sedimentation. Research at the Argonne National Laboratory has demonstrated ...

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