Award Data

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A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

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Microwave Technologies is proposing the development of a novel radio-frequency electron gun (CRFG) for applications such as high-power, high-frequency radiation sources for BMDO sensors and directed energy. The CRFG employs a radio-frequency (RF) electricfield produced inside a compact microwave resonator to extract short high-current electron bunches from a novel silicon cathode. The cathode un ...

This project will involve the development of a novel miniature dielectric traveling-wave tube (DTWT) that will provide short-wavelength radiation for numerous civilian and military applications. The MWS is based on the interaction of an electron beam withthe electromagnetic fields of a traveling wave inside a very compact dielectric waveguide. Our initial studies show the DTWT will offer order ...

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In order to provide the required simulation frame rates we propose to decouple the incident flux calculations from a simple thermal response model. We propose to develop a table-lookup methodology based on high fidelity precomputed environmental and eventually aerothermal fluxes which can be draw in real time to drive the thermal response model. A simple 1-D thermal calculation based on an analyt ...

The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

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Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...