Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Very Large Area Microchannel Plate Neutron Detectors

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: 18a

    NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

    STTR Phase I 2011 Department of Energy
  2. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. N/A

    SBC: Boston Nitride Technologies, Inc.            Topic: N/A

    N/A

    STTR Phase I 2000 Department of DefenseMissile Defense Agency
  6. N/A

    SBC: Boston Nitride Technologies, Inc.            Topic: N/A

    N/A

    STTR Phase I 2000 Department of DefenseMissile Defense Agency
  7. N/A

    SBC: METAL MATRIX CAST COMPOSITES, LLC (DBA M            Topic: N/A

    N/A

    STTR Phase I 2000 Department of DefenseMissile Defense Agency
  8. N/A

    SBC: Physical Sciences Inc.            Topic: N/A

    N/A

    STTR Phase I 2000 Department of Energy
  9. N/A

    SBC: Science Research Laboratory, Inc            Topic: N/A

    N/A

    STTR Phase I 2000 Department of Energy
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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