You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Very Large Area Microchannel Plate Neutron Detectors

    SBC: NOVA SCIENTIFIC INCORPORATED            Topic: 18a

    NOVA Scientific, Inc., teamed with the Electronics Group of Oak Ridge National Laboratory, proposes to construct very large area Microchannel Plate neutron detectors. The applications of these much larger format detectors will serve an exceptionally broad range of government agencies from neutron scattering detectors for DOE to nuclear material panel detectors for NNSA, and ultimately to nuclear m ...

    STTR Phase I 2011 Department of Energy
  2. High Pressure Open Channel Electroosmotic Pump

    SBC: MicroChem Solutions            Topic: 57c

    The objective of lab-on-chip (LOC) or -TAS is to integrate and perform multiple analytical processes (e.g. sample pretreatment, solution distribution/mixing, separation, detection, etc.) on a microchip platform. So far, most LOC research has been focused on electrophoretic separations. Little has been done on multi-process integration, due mainly to the lack of a robust and miniaturized pump that ...

    STTR Phase I 2011 Department of Energy
  3. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. The Use of Hydrogen for Defect Reduction in Large Format Infrared Detector Materials

    SBC: AMETHYST RESEARCH INC            Topic: MDA11T002

    Active defects negatively impact the performance of IRFPAs by increasing noise at various levels up to, and including, catastrophic degradation. Evidence indicates that"killer defects"are related to the interaction of open core screw dislocations with impurities that remain after substrate preparation, prior to HgCdTe growth. This impurity diffusion creates a conducting channel that shorts the j ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  5. High Operability HgCdTe Focal Plane Arrays on Si by Mitigation of Defects

    SBC: AMETHYST RESEARCH INC            Topic: MDA11T002

    For HgCdTe infrared focal plane arrays fabricated on Si substrates, a model has recently been proposed to account for the disparity between the density of failed pixels and the density of dislocations that are present in the HgCdTe junction region. The model distinguishes between active and inactive dislocations and offers a hypothesis that dislocations are active only when they intersect particul ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  6. Defect Reduction at the Silicon (112) Wafer Surface by Amorphization and Recrystallization

    SBC: AMETHYST RESEARCH INC            Topic: MDA11T002

    Silicon wafers oriented on (112) are the preferred substrates for deposition of mercury cadmium telluride layers by molecular beam epitaxy. Surface defects introduced during polishing of the wafers degrade the quality of the epitaxy and the performance of infrared detectors fabricated within these materials. We propose a process for reducing the density of the defects that are inherent in the si ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  7. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government