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Award Data
The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.
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High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates
SBC: CERMET, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Development of a Truly Lattice-Matched III-Nitride Technology for
SBC: CERMET, INC. Topic: N/ACermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
N/A
SBC: COVALENT ASSOC., INC. Topic: N/AN/A
STTR Phase II 1999 Department of Energy -
In-Line Trona Fiber-Optic Raman System
SBC: Detection Limit, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Bottoms-Up In-Situ Vitrification of Hard-to-Treat Buried Mixed Wastes
SBC: RESODYN CORPORATION Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Adaptive Daylighting Control System
SBC: Orion Engineering Company Topic: N/AN/A
STTR Phase I 1999 Department of Energy -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency
