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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Improved SiO2/SiC Interface for High-Power MOS-Controlled SiC Devices
SBC: ASTRALUX, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Spatial Light Modulator Based Subsystems for Real-Time Laser Pattern Generation and Multi-Spot Beam Steering
SBC: BOULDER NONLINEAR SYSTEMS, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates
SBC: CERMET, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Development of a Truly Lattice-Matched III-Nitride Technology for
SBC: CERMET, INC. Topic: N/ACermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Novel Programmable Optical Interconnects for Optoelectronic Packaging
SBC: NEW SPAN OPTO-TECHNOLOGY, INC. Topic: N/AOptical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...
STTR Phase II 2001 Department of DefenseMissile Defense Agency -
Novel Programmable Optical Interconnects for Optoelectronic Packaging
SBC: NEW SPAN OPTO-TECHNOLOGY, INC. Topic: N/AOptical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency