Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. MBE CdTe on Compliant Substrates for High Performance IRFPAs

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays are based on HgCdTe grown on bulk CdZnTe substrates. The use of Si-based substrates would eliminate a number of drawbacks related to the HgCdTe/CdZnTe system and permit larger formats. We have developed growth protocols that produce material with good crystal quality for such a highly mismatched heteroepitaxial system. Double crystal rocking c ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  3. Defect Passivation for High Performance HgCdTe on Si

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. Defect Reductions on Si Substrates for HgCdTe MBE Growth

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  5. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  6. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Third Generation Infrared Focal Plane Arrays based on HOT" HgCdTe Detectors"

    SBC: EPIR TECHNOLOGIES INC            Topic: N/A

    HgCdTe infrared arrays operating at 77K can now be tailored to a wide range of wavelengths ranging from 1 to 14 mm. However, the cooling requirements of traditional detectors make them bulky and unsuitable for many applications. Due to advancements inmaterials and device technologies, it is now possible to fabricate HgCdTe-based infrared arrays operating close to room temperature with sensitiviti ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government