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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. MBE CdTe on Compliant Substrates for High Performance IRFPAs

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays are based on HgCdTe grown on bulk CdZnTe substrates. The use of Si-based substrates would eliminate a number of drawbacks related to the HgCdTe/CdZnTe system and permit larger formats. We have developed growth protocols that produce material with good crystal quality for such a highly mismatched heteroepitaxial system. Double crystal rocking c ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  3. Defect Passivation for High Performance HgCdTe on Si

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. Defect Reductions on Si Substrates for HgCdTe MBE Growth

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  5. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  6. Continuous Wave Terahertz Source Photonic Band Engineering

    SBC: AGILTRON, INC.            Topic: N/A

    "The terahertz (THz) wave region is an underutilized electromagnetic spectrum in which generation is difficult. The existing THz sources are generated either by large and expensive free electron laser or by pulsed optical radiations. There is an increasedneed for continuous THz wave source of high temporal and spatial coherence. The practical use of THz spectrum requires new laser technology th ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  7. ZnO Based Integrated Photonics

    SBC: CERMET, INC.            Topic: N/A

    "ZnO is an excellent candidate for the growing field of nanophotonics due to its index of refraction, availability of native substrates, and the possibility of light emission. These properties make ZnO an ideal candidate on this growing field. Phase Iwork will concentrate in designing and characterizing waveguides, which will be the interconnects of future ZnO based devices built homoepitaxiall ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  8. Development of Lattice-Matched AlInN MBE Technology for UV Emitters and High Frequency Electronic Applications

    SBC: CERMET, INC.            Topic: N/A

    "Cermet, in collaboration with researchers at Georgia Institute of Technology, propose to implement a lattice matched AlInN using existing substrate technology. The implementation of a lattice matched substrate promises to produce near dislocation freeAlInN heterojunction for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  9. Composite Materials for Cryogenic Storage Tanks and Superconductivity Applications

    SBC: CU AEROSPACE L.L.C.            Topic: N/A

    "Composite cryogenic storage tanks will enable ABL and SBL program objectives by reducing structural weight, increasing reactant mass, reducing systems costs, and reducing risk to the programs. A recent development in composite materials design formultifunctional damage mitigation is proposed as a solution to the microcracking problem for composite tanks for storage of cryogens. By incorporating ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
  10. Electronic Smart Materials Based on Carbon Nanotube Sensors/Actuators

    SBC: EMITECH, INC.            Topic: N/A

    "Emitech, Inc. proposes an innovative approach aimed at the development of carbon nanotube (CNT)-based thin film actuators/sensors possessing gravimetric work density up to 24000 J/kg per cycle, operating at frequencies up to 1 MHz, and at temperatures upto 700 C. This new concept is based on the quantum chemical effect of nanotube dimension change under charge doping/injection.The ability to move ...

    STTR Phase I 2002 Department of DefenseMissile Defense Agency
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