Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  4. Simultaneous Spatial/Spectral Infrared Sensor (SSIRS)

    SBC: I Technology Applications            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  5. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  6. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Lightweight Nanocomposites for Missile Defense Applications

    SBC: Mers, Llc            Topic: N/A

    The key requirement for nanocomposite formation is dispersion of clay particles at nm length scales in polymer matrices, which is not trivial. Such a molecular-level dispersion necessitates complete exfoliation of clay particles, which occurs sporadicallywith the fabrication procedures currently in use. Based on a previously demonstrated concept, we propose to develop a novel nanocomposite fabri ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. PIBO Dielectric Film for Advanced Microelectronics Packaging

    SBC: OXAZOGEN, INC.            Topic: N/A

    Electronics products in applications including mobile communications, work stations, small computers, automotive controls, and aerospace and military weapons systems are moving relentlessly toward smaller, thinner, and lighter formats in lower costpackages. Interconnect density requirements in these products are rapidly outstripping that which is achievable through fabrication of traditional mult ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government