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Award Data
The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.
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High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates
SBC: CERMET, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Development of a Truly Lattice-Matched III-Nitride Technology for
SBC: CERMET, INC. Topic: N/ACermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
TeraHertz High-Reliability InP DHBT Technology for Millimeter-Wave Amplifiers and Ultra-High Speed Digital ICs
SBC: RJM Semiconductor, L.L.C. Topic: N/ARJM Semiconductor and NASA JPL propose to demonstrate the world's fastest InP transistor technology with cut-off frequencies approaching 1TeraHertz combined with the essential device reliability required for real systems deployment. The approach will adopta new patent-pending Self-Aligned HBT Process invented at RJM Semiconductor that employs stable, non-diffusing Carbon-doped bases, high breakdow ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
A Tunable Interferometric Random Optical Cross-Switch
SBC: Scientific Solutions, Inc. Topic: N/AA random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor
SBC: Spinix Corporation Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Modeling of Lithium-Ion Cell Performance
SBC: GLOBAL TECHNOLOGY CONNECTION, INC. Topic: MDA10T004Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency