You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  5. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Development of III-V Nitride Diode Arrays for UV Imaging Applications

    SBC: Nitronex Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government