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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  5. New Rare-Earth-Doped Glass Fiber Lasers and Amplifiers for 1.54 um Communications

    SBC: KIGRE, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  6. New Broad Band Rare-Earth-Doped Glasses For Optical Fiber Communications

    SBC: KIGRE, INC.            Topic: N/A

    Kigre has an idea and evidence for a new family of broadband glasses that break all of Zachariasen's standard accepted rules for glass formation. This family of glasses is based upon the extensive use of multiple glass formers such as SiO2, B2O3, La2O3and P2O5. By employing multiple glass formers in a laser glass, Kigre is able to expand the bandwidth without sacrificing cross section and gain. ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. New Rare-Earth-Doped Glass Fiber Lasers and Amplifiers for 1.54 um Communications

    SBC: KIGRE, INC.            Topic: N/A

    Kigre's Phase I fiber amplifier development effort demonstrated 10dB of internal gain at 1.54um from 2.2 cm long section of MM-2 erbium ytterbium phosphate fiber amplifier pumped at 980nm. 26dB of gain was also produced from a 8.8com long section of thissame fiber pumped at 1480nm. Mode field image testing of a fiber show this MM-2 fiber to be perfect 1.54um single mode containment match to stan ...

    STTR Phase II 2001 Department of DefenseMissile Defense Agency
  8. New Rare-Earth-Doped Glass Fiber Lasers and Amplifiers for 1.54 um Communications

    SBC: KIGRE, INC.            Topic: N/A

    Kigre's Phase I fiber amplifier development effort demonstrated 10dB of internal gain at 1.54um from 2.2 cm long section of MM-2 erbium ytterbium phosphate fiber amplifier pumped at 980nm. 26dB of gain was also produced from a 8.8com long section of thissame fiber pumped at 1480nm. Mode field image testing of a fiber show this MM-2 fiber to be perfect 1.54um single mode containment match to stan ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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