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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Displaying 1 - 10 of 13 results
 
  • Record 1 TO 13

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency

  5. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

  6. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

  7. Axial Gradient Index (GRIN) Microlenses for Tunable Wavelength Division Multiplexer with Surface-normal Packaging Configuration

    SBC: RADIANT RESEARCH, INC.            Topic: N/A

    Conventional wave division (de)multiplexers (WD(DM)Ms) fail to provide a universal design enabling the coverage of the large dynamic range of wavelength separations which vary from sub-nm to 30 nm. The packaging designs affiliated with such WD(D)Ms alsomake the systems vulnerable in harsh environments. In this program, Radiant Research, Inc. (RRI), in collaboration with the University of Texas a ...

    STTR Phase II 2001 Department of DefenseMissile Defense Agency

  8. Axial Gradient Index (GRIN) Microlenses for Tunable Wavelength Division Multiplexer with Surface-normal Packaging Configuration

    SBC: RADIANT RESEARCH, INC.            Topic: N/A

    Conventional wave division (de)multiplexers (WD(DM)Ms) fail to provide a universal design enabling the coverage of the large dynamic range of wavelength separations which vary from sub-nm to 30 nm. The packaging designs affiliated with such WD(D)Ms alsomake the systems vulnerable in harsh environments. In this program, Radiant Research, Inc. (RRI), in collaboration with the University of Texas a ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

  9. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

  10. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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