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Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

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Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

It is proposed to develop, model, and demonstrate composite case materials with sympathetic responses to slow cookoff. In phase II, the proposed study will focus upon conducting subscale SCO testing on composite case materials and validate a physics based modeling and simulation tool. Subscale motor case dimensions will be analogue to a specific MDA rocket booster.

We are proposing an innovative approach to sensor fusion and target recognition based on transductive inference with support vector machines. Our proposed algorithm will apply innovative discrimination to the fusion of sensor (feature) and contextual scenario information through the development of robust algorithms and software necessary to collect, process, and fuse information from multiple sour ...

A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

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