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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates
SBC: CERMET, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Development of a Truly Lattice-Matched III-Nitride Technology for
SBC: CERMET, INC. Topic: N/ACermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Botnet Analytics Appliance (BNA)
SBC: MILCORD LLC Topic: HSB061008Recent reports indicate the activity of more than 6,000 botnet C and C servers. 70 million zombies are responsible for 80 percent of SPAM. Given the exponential growth of the botnet threat, the security of our nation s cyber infrastructure demand automated botnet activity monitoring solutions. In Phase I, Milcord developed a feasibility prototype of a Bayesian Activity Monitor for Botnet Defense. ...
STTR Phase II 2007 Department of Homeland Security -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Composite Case Improvement for Solid Rocket Motor
SBC: PHYSICAL SCIENCES INC. Topic: MDA06T004It is proposed to develop, model, and demonstrate composite case materials with sympathetic responses to slow cookoff. In phase II, the proposed study will focus upon conducting subscale SCO testing on composite case materials and validate a physics based modeling and simulation tool. Subscale motor case dimensions will be analogue to a specific MDA rocket booster.
STTR Phase II 2007 Department of DefenseMissile Defense Agency -
Radar Debris Algorithms and Models for Discrimination
SBC: PHYSICAL SCIENCES INC. Topic: MDA07T004We are proposing an innovative approach to sensor fusion and target recognition based on transductive inference with support vector machines. Our proposed algorithm will apply innovative discrimination to the fusion of sensor (feature) and contextual scenario information through the development of robust algorithms and software necessary to collect, process, and fuse information from multiple sour ...
STTR Phase I 2007 Department of DefenseMissile Defense Agency -
A Tunable Interferometric Random Optical Cross-Switch
SBC: Scientific Solutions, Inc. Topic: N/AA random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency