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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  5. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  6. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. Miniaturized Thermoacoustic Cryocooler for Missile Defense Applications(1001-247)

    SBC: Triton Systems, Inc.            Topic: MDA07T002

    Triton Systems, Inc., proposes to transition a proof of concept cryocooler developed under the MDA STTR Phase I effort, to a miniaturized cooling system that will have commonality and reducibility to serve multiple MDA missions. The proposed cryocooler uses a novel standing wave design to achieve the miniaturization and low weight needed for MDA focal plane array cooling systems. This cryocool ...

    STTR Phase II 2008 Department of DefenseMissile Defense Agency
  10. Low Cost Planar Antennas for Phased Array Radars

    SBC: Wang Electro-Opto Corporation            Topic: MDA07T011

    This STTR program, Topic MDA07-T011, aims at developing an array radiator for low-cost X-band planar phased array antenna with over 50% reduction in LCC (life-cycle cost), which currently is prohibitively high. The phased array must be planar, wideband, and compatible with the fabrication process of low-power T/R modules. In Phase-I, Wang Electro-Opto Corporation (WEO), Ohio State University, and ...

    STTR Phase II 2008 Department of DefenseMissile Defense Agency
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