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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Innovative Photonic Time Delay Units for Radar Applications

    SBC: S2 CORPORATION            Topic: MDA08T012

    We aim to build and demonstrate an innovative photonic true time delay solution which alleviates the fundamental problem of cascaded optical switches, and additionally offers several significant benefits. The device uses wideband spatial-spectral (S2) holographic optical memory materials to store and access several broadband time delay gratings. Broadband optical chirps are used to create these ti ...

    STTR Phase II 2010 Department of DefenseMissile Defense Agency
  2. Dynamically Tunable Metamaterial Filters(1001-455)

    SBC: Triton Systems, Inc.            Topic: MDA08T009

    Triton, together with our academic and industrial partners, proposes to develop and fabricate dynamic filters based on metamaterials. These dynamic filters are being engineered to enhance the efficacy of focal plane arrays used in interceptor sensors, resulting in significant cost savings. The filter will offer a dynamically tunable pass band, which will reject stray light coming in off-wavelen ...

    STTR Phase II 2010 Department of DefenseMissile Defense Agency
  3. Low Cost, High Performance Transmit/Receive Integrated Circuits on a Single Chip

    SBC: Versaq            Topic: MDA09T004

    In the proposed effort we plan to build a fully-operational X-band T/R Integrated Circuit. One of the key-elements to building a fully operational radar is the requisite RF electronics that feed to each antenna element. Historically, radar transmit/receive (T/R) modules have been implemented as complex, multi-chip GaAs MMICs, resulting in very high cost per T/R module, high launch weight, and high ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  4. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  5. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  8. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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