Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Intelligent Adaptive Needs Characterization for M&S Systems Engineering

    SBC: Vistology, Inc.            Topic: MDA11T003

    System requirements elicitation is a time consuming process with an extremely high penalty for errors. Mistakes made in the requirements phase will cost 50 times more to fix while they are uncovered in the production phase as compared to fixing them in the requirements phase. VIStology and Northeastern University are proposing to develop an approach for supporting the requirements elicitation phas ...

    STTR Phase I 2012 Department of DefenseMissile Defense Agency
  2. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with their academic partners and industrial partners propose to develop a prototype integrated physics-based model and accelerated testing process that will reduce the qualification time and testing required for Li-ion cells used in LEO/MEO satellite applications. The integrated physics-based model will focus on three key Li-ion cell degradatio ...

    STTR Phase II 2012 Department of DefenseMissile Defense Agency
  3. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  5. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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