You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Better GaN substrates through HVPE on bulk AlN substrates
SBC: Crystal IS, Inc. Topic: N/ASingle-crystal aluminum nitride substrates will be used for epitaxial growth of GaN by hydride vapor phase epitaxy (HVPE). The relatively close match in crystal structure, in chemical compatibility, and in thermal expansion should allow much high quality(and much thicker) GaN layers to be grown. HVPE will allow these GaN epitaxial layers to grown cost effectively.Extremely high power microwave ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Narrow-linewidth, Sol-Gel Glass/Photopolymer Holographic Filter Technology
SBC: HYBRID TECHNOLOGIES Topic: N/AHybrid Technologies (HT, Amherst, NY) in cooperation with the Institute for Lasers, Photonics and Biophotonics (ILPB) at the State University of New York at Buffalo proposes to develop new bulk glass-photopolymer materials and investigate the feasibilityof using them for high efficiency, permanent, highly wavelength selective holographic gratings needed for Dense Wavelength Division Multiplexing ( ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
A Tunable Interferometric Random Optical Cross-Switch
SBC: Scientific Solutions, Inc. Topic: N/AA random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor
SBC: Spinix Corporation Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Novel heterojunction diodes for High Power Electronics
SBC: PHOTRONIX Topic: N/AThe wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
High-Speed Three-Channel Photonic Time Delay Unit
SBC: AGILTRON, INC. Topic: MDA08T012An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...
STTR Phase II 2011 Department of DefenseMissile Defense Agency