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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Fast Thermal Calculations for Responsive Targets in Support of Real-Time Scene Generation

    SBC: MODERN TECHNOLOGY SOLUTIONS, INC.            Topic: MDA10T003

    In order to provide the required simulation frame rates we propose to decouple the incident flux calculations from a simple thermal response model. We propose to develop a table-lookup methodology based on high fidelity precomputed environmental and eventually aerothermal fluxes which can be draw in real time to drive the thermal response model. A simple 1-D thermal calculation based on an analyt ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  3. Development of a Miniature Dielectric Traveling-Wave Tube

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    This project will involve the development of a novel miniature dielectric traveling-wave tube (DTWT) that will provide short-wavelength radiation for numerous civilian and military applications. The MWS is based on the interaction of an electron beam withthe electromagnetic fields of a traveling wave inside a very compact dielectric waveguide. Our initial studies show the DTWT will offer order ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Compact Radio-Frequency Electron Gun

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    Microwave Technologies is proposing the development of a novel radio-frequency electron gun (CRFG) for applications such as high-power, high-frequency radiation sources for BMDO sensors and directed energy. The CRFG employs a radio-frequency (RF) electricfield produced inside a compact microwave resonator to extract short high-current electron bunches from a novel silicon cathode. The cathode un ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Wide Bandgap Heterojunction Bipolar Transistors for X-Band Operation

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The objective is to develop GaN/4H-SiC HBTs which were demonstrated for the first time in Phase I. These novel HBTs will developed for microwave applications. More specifically, the performance goal is a GaN/SiC heterojunction bipolar transistor (HBT) withan exceptionally high power density of 10 W/mm (of emitter stripe width and transit frequency much greater than 20 GHz for amplifiers in satelli ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Wide Bandgap Heterojunction Bipolar Transistors for X-Band Operation

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The objective is to develop GaN/4H-SiC HBTs which were demonstrated for the first time in Phase I. These novel HBTs will developed for microwave applications. More specifically, the performance goal is a GaN/SiC heterojunction bipolar transistor (HBT) withan exceptionally high power density of 10 W/mm (of emitter stripe width and transit frequency much greater than 20 GHz for amplifiers in satelli ...

    STTR Phase II 2001 Department of DefenseMissile Defense Agency
  9. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

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