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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  3. High Power Gallium Nitride HEMT Prepared by Ion Implantatio

    SBC: Implant Sciences Corporation            Topic: N/A

    Implant Sciences Corporation proposes to develop a superior power transistor design based on ion implanted nitride semiconductor materials which will be produced at Howard University. Our lateral device design features an inverted GaN channel with the AlGaN charge supply layer doped by ion implantation. Ion implantation allows selective area doping, which will let us create for the first time an u ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Tooling-Free MMC Casting by Combining 3-D Printing of Ceram

    SBC: METAL MATRIX CAST COMPOSITES, LLC (DBA M            Topic: N/A

    Three-dimensional printed preforms will be used as mold patterns for MMCC's high-density, pressure resistant, castable refractory. Hard tooling will be eliminated from the Advanced Pressure Infiltration Casting process (APIC ). Cost for Al/Sic electronic housings will be slashed 75% over conventional pressure casting. Complex parts will be easily manufactured. Design modifications can be quickly i ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Growth of New Wide Band Gap Nitride Semiconductors for Yell

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    The goal of the SBIR Phase I proposal is an attempt to grow the world's first single crystalline new wide band gap nitride semiconductors by MOCVD for developing optoelectronic and optical devices in yellow to green visible band as well as lattice matched heterostructure wide band gap electronic devices. The expected direct transition, wide band gap electronic structure and the significant nonline ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
  6. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

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