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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  2. Stratospheric Electrical Environments Applicable To Photovoltaic Arrays On HAA Platforms

    SBC: LIGHTNING TECHNOLOGIES, INC.            Topic: MDA04T008

    The objective of this program is to characterize the upper atmosphere electrical environment so that the effects of this environment on high altitude airships (HAA) and other platforms intending to operate in this environment can be determined, and protection methods developed. This includes transient luminous events (TLEs), such as red sprites and blue jets and their associated electrical propert ...

    STTR Phase II 2005 Department of DefenseMissile Defense Agency
  3. Design and Development of Radiation Hardened ROIC for Multi-color LWIR/VLWIR Focal Plane Arrays

    SBC: Magnolia Optical Technologies, Inc.            Topic: MDA05T009

    Radiation Hardened Multi-color infrared (IR) focal planes are required for MDA/SMDC systems applications . Key to meeting these system requirements is to develop multi-color radiation hardened HgCdTe focal plane arrays for LWIR band ( 7-14 microns) and VLWIR band with wavelength of greater than 14 microns with high pixel uniformity, reduced readout noise, improved resolution, and higher temperatur ...

    STTR Phase I 2005 Department of DefenseMissile Defense Agency
  4. Full-spectrum Integrated Reaction Evaluation and Synthesis (FIRES)

    SBC: Spectral Sciences, Inc.            Topic: MDA05T017

    Highly energetic chemical processes play a central role in many military and commercial applications. For example, spectral emissions from missile plumes, arising from high-velocity chemical interactions of exhaust gases with the atmosphere, are used to detect, track, and identify threat targets. Detailed, quantitative knowledge of the energy-dependent chemical reaction cross sections and rates i ...

    STTR Phase I 2005 Department of DefenseMissile Defense Agency
  5. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  10. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

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