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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  2. ABL (Airborne Laser) Detection Sensor Improvements

    SBC: Aerodyne Research, Inc.            Topic: MDA06T006

    The first sentinel of ABL’s present target acquisition suite is a passive infrared search and track sensor of 1970s vintage, which we propose replacing with HyPAWS. HyPAWS is a low-cost passive wide-field of view staring sensor. Several such units suffice to provide full 360-degree view coverage. Leveraging revolutionary sensing techniques in ongoing development, HyPAWS offers advanced detect ...

    STTR Phase I 2006 Department of DefenseMissile Defense Agency
  3. Innovative Solid Rocket Motor Design for Insensitive Munitions

    SBC: Physical Sciences Inc.            Topic: MDA06T004

    It is proposed to investigate an innovative mitigation technique for insensitive munitions through a new rocket motor case design. The proposed study will focus upon developing a motor case with sympathetic responses to unplanned thermal stimuli. This particular motor case design will be according to current operating mission parameters for a specific MDA rocket booster.

    STTR Phase I 2006 Department of DefenseMissile Defense Agency
  4. A lightweight infrastructure for detection and mitigation of insider threats in distributed environments

    SBC: Scientific Systems Company Inc.            Topic: MDA06T009

    The insider threat remains one of the most difficult to detect -- left alone to mitigate -- threats against information systems. The overall objective of the effort (Phase I and Phase II) is to produce and prototype a Distributed Insider Threat Detection System (DITDS) for distributed environments, capable of identifying and quantifying emerging insider threats against the network, allowing for t ...

    STTR Phase I 2006 Department of DefenseMissile Defense Agency
  5. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  10. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

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