Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Composite Case Improvement for Solid Rocket Motor

    SBC: Physical Sciences Inc.            Topic: MDA06T004

    It is proposed to develop, model, and demonstrate composite case materials with sympathetic responses to slow cookoff. In phase II, the proposed study will focus upon conducting subscale SCO testing on composite case materials and validate a physics based modeling and simulation tool. Subscale motor case dimensions will be analogue to a specific MDA rocket booster.

    STTR Phase II 2007 Department of DefenseMissile Defense Agency
  2. Miniaturized Thermoacoustic Cryocooler for Missile Defense Applications(1001-088)

    SBC: Triton Systems, Inc.            Topic: MDA07T002

    The U.S. military envisions a range of cryocooler systems that can enable specific operational requirements. For missile defense applications, Triton is targeting cooling of infrared focal plane arrays (FPA) in optics which address surveillance, missile threat warning systems and missile seeker systems in general. Triton Systems Inc proposes to develop thermal management solutions for space elec ...

    STTR Phase I 2007 Department of DefenseMissile Defense Agency
  3. Radar Debris Algorithms and Models for Discrimination

    SBC: Physical Sciences Inc.            Topic: MDA07T004

    We are proposing an innovative approach to sensor fusion and target recognition based on transductive inference with support vector machines. Our proposed algorithm will apply innovative discrimination to the fusion of sensor (feature) and contextual scenario information through the development of robust algorithms and software necessary to collect, process, and fuse information from multiple sour ...

    STTR Phase I 2007 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  5. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  6. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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