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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Advanced Chemistry and Radiation Modules for Hypersonic Signatures

    SBC: Spectral Sciences, Inc.            Topic: MDA15T003

    Karagozian & Case, Inc. (K&C) and the Georgia Institute of Technology (Georgia Tech) will develop a re-usable, cost-effective, and accurate dynamic characterization methodology capable of measuring the dynamic material properties of various materials of interest under very high strain rates. Materials property data for various ductile materials (e.g., steel and aluminum) are required as input to f ...

    STTR Phase I 2017 Department of DefenseMissile Defense Agency
  2. Methodologies for Cost-Effective Measurement of Dynamic Material Properties or Characterization of Materials under Dynamic Loads

    SBC: Bodkin Design & Engineering, LLC            Topic: MDA16T003

    We propose a new test device to replace light gas guns to study impact physics. Approved for Public Release | 17-MDA-9219 (31 May 17)

    STTR Phase I 2017 Department of DefenseMissile Defense Agency
  3. Green Monopropellant Thruster Technology Maturation

    SBC: Busek Co., Inc.            Topic: AF151066

    Busek, with its Small Business Technology Transfer partner Sandia National Laboratory (SNL), proposes to undertake the development of a AF-M315E green monopropellant thruster for a potential flight application. Busek will be designing, fabricating, and qualifying the thruster to Technology Readiness Level (TRL) 5 status. SNL will be performing additional qualification tests for Busek and perfor ...

    STTR Phase II 2017 Department of DefenseMissile Defense Agency
  4. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  5. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  9. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  10. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

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