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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Deep Inference and Fusion Framework Utilizing Supporting Evidence (DIFFUSE)

    SBC: BOSTON FUSION CORP            Topic: MDA15T001

    Combining information from disparate sensors can lead to better situational awareness and improved inference performance; unfortunately, traditional multi-sensor fusion cannot capture complex dependencies among different objects in a scene, nor can it exploit context to further boost performance. Integrating context information within a fusion architecture to reason cohesively about scenes of inte ...

    STTR Phase I 2016 Department of DefenseMissile Defense Agency
  2. Spectral crosstalk reduction in dual-band long-wavelength infrared (LWIR) photodetectors based on antimonide-based type-II superlattices

    SBC: NOUR LLC            Topic: MDA15T004

    Antimonide-based Type-II superlattices (T2SL) are capable of delivering highly capable infrared detection capability. Improvement in material quality and processing techniques, as well as evolutionary modifications in device architecture have demonstrated the advantages of the material system over alternatives, and proven it as a viable candidate for the next generation infrared detection. Yet, th ...

    STTR Phase I 2016 Department of DefenseMissile Defense Agency
  3. MBE CdTe on Compliant Substrates for High Performance IRFPAs

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays are based on HgCdTe grown on bulk CdZnTe substrates. The use of Si-based substrates would eliminate a number of drawbacks related to the HgCdTe/CdZnTe system and permit larger formats. We have developed growth protocols that produce material with good crystal quality for such a highly mismatched heteroepitaxial system. Double crystal rocking c ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. Defect Passivation for High Performance HgCdTe on Si

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  5. Defect Reductions on Si Substrates for HgCdTe MBE Growth

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: MDA11T002

    Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  6. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  8. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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