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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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FLUORINATED DIAMOND THIN FILMS FOR TRIBOLOGICAL APPLICATIONS
SBC: AERODYNE RESEARCH INC Topic: N/AAN APPROACH IS BEING INVESTIGATED FOR THE FLUORINATION OF DIAMOND THIN FILMS FOR TRIBOLOGICAL APPLICATIONS. THE APPROACH USES LOW PRESSURES OF F AND/OR CFX FREE RADICALS. TO DEMONSTRATE THE FEASIBILITY OF THIS APPROACH, DATA IS BEING COLLECTED ON: FLUORINATION KINETICS, THE COMPOSITION AND STRUCTURE OF THE SURFACE AND NEAR SURFACE LAYERS, THE EFFECTS OF TEMPERATURE ON THE FLUORINATION PROCESS, AND ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency -
ELECTROCHEMICAL CRYOCOOLER
SBC: ANALYTIC POWER LLC Topic: N/AA CLOSED CYCLE CRYOCOOLER IS BEING INVESTIGATED USING AN APPROACH THAT COMBINES ELECTROCHEMICAL COMPRESSOR AND EJECTOR TECHNOLOGIES. AN ELECTROCHEMICALLY INACTIVE CRYOGEN IS BEING USED IN A UNIQUE TERNARY REFRIGERANT. LIKEOTHER ELECTROCHEMICALLY-DRIVEN REFRIGERATION SYSTEMS UNDER DEVELOPMENT, THIS SYSTEM HAS NO MOVING PARTS. THE SYSTEM ISDESIGNED TO REACH A TEMPERATURE OF 77K, BUT A SIMPLE MODIFIC ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency -
INNOVATIVE RESEARCH TESTBED
SBC: Applied Resonance Technology Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
NEGATIVE LENS LASER
SBC: CANDELA CORPORATION Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
NUCLEATION SITE ARRAYS FOR IMPROVED GROWTH OF CRYSTALLINE DIAMOND FILM
SBC: Epion Corporation Topic: N/ADIAMOND FILMS ON NON-DIAMOND SUBSTRATES ARE USUALLY CHARACTERIZED BY HIGHLY DISORDERED MICROSTRUCTURE, LOW FILM DENSITY, AND POOR MORPHOLOGY; RESULTING IN DIFFICULTIES IN PRODUCING LARGE AREA, HIGH QUALITY FILMS. THE NUCLEATION AND GROWTH BEHAVIORS OF DIAMOND FILM ALLOW THE EMPLOYMENT OFARRAYS OF SMALL, SHALLOW CRATERS INTRODUCED INTO A HIGH-QUALITY SUBSTRATE SURFACE BY FOCUSED ION BEAM MILLING TO ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency -
PRESSURE CASTING FOR NEAR-NET SHAPE PRODUCTION OF LOW COST GRAPHITE MAGNESIUM SPACE STRUCTURES
SBC: FOSTER-MILLER, INC. Topic: N/ATHE FEASIBILITY IS BEING DETERMINED OF A LOW-COST, METAL MATRIX COMPOSITE (MMC) FABRICATION TECHNIQUE FOR NEAR-NET SHAPE FABRICATION OF SPACE STRUCTURAL JOINTS THAT WOULD INVOLVE FABRICATION OF A CUSTOM-TAILORED FIBER PREFORM AND A SPECIALIZED MOLD FOLLOWED BY INFILTRATION WITH MOLTEN MAGNESIUM ALLOY. INCORPORATION OF LOW-COST MATERIALS, TOOLING, AND PROCESSING WOULD MAKE THE PROCESS ECONOMICAL AS ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency -
HIGH CRITICAL CURRENT DENSITY SUPERCONDUCTING OXIDES VIA A THREE DIMENSIONAL TEMPLATE
SBC: FOSTER-MILLER, INC. Topic: N/ATHE OBJECTIVE OF THIS PROJECT IS TO PRODUCE HIGH CRITICAL CURRENT (JC) SUPERCONDUCTING OXIDE (SCO) FIBERS, FILMS, AND SHAPES BY ORIENTING THE CRYSTAL STRUCTURE. THIS IS BEING ACCOMPLISHED BY TAKING ADVANTAGE OF THE HIGH TEMPERATURE CAPABILITY AND OPEN FIBILLAR NETWORK OF CERTAIN LIQUID CRYSTAL POLYMERS (LCP). THE OPEN, CONNECTED, AND ORIENTED NETWORK IS FILLED USING SOL-GEL TECHNIQUES, AND THEN FI ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency -
INTEGRATED AUDIO-VISUAL HEADSET DISPLAY TERMINAL FOR MAINTENANCE PERSONNEL
SBC: IBIS TECHNOLOGY CORP. Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
NON-DESTRUCTIVE TESTING OF SIMOX STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY
SBC: IBIS TECHNOLOGY CORP. Topic: N/AN/A
SBIR Phase I 1990 Department of DefenseMissile Defense Agency -
EPITAXIAL GALLIUM-ARSENIDE ON SILICON-ON-INSULATOR WAFERS
SBC: Kopin Corporation Topic: N/ATHE NEED FOR LARGE-AREA GALLIUM-ARSENIDE (GAAS) WAFERS FOR ELECTRONIC AND OPTOELECTRONIC DEVICES IS BEING ADDRESSED THAT ARE SUITABLE FOR MONOLITHIC INTEGRATION OF BOTH GAAS AND SILICON (SI) RADIATIONHARDENED FUNCTIONS. THE GROWTH OF GAAS IS BEING INVESTIGATED BY ORGANO-METALLIC CHEMICAL VAPOR DEPOSITION ON SILICON-ON-INSULATOR (SOI) WAFERS PREPARED BY ZONE MELTING RECRYSTALLIZATION (ZMR). THE USE ...
SBIR Phase II 1990 Department of DefenseMissile Defense Agency