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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Investigation of Donor and Acceptor Ion Implantation in AlN

    SBC: AGNITRON TECHNOLOGY, INC            Topic: 02a

    AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to achieve full utilization of AlN for power electronics applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it ...

    SBIR Phase I 2014 Department of Energy
  2. Integrated Membrane Reactor for Pre-Combustion CO2 Capture

    SBC: TECHVERSE, INC.            Topic: 12e

    For sustained coal utilization for power generation, while addressing possible long-term global climate concerns, it is imperative to capture and sequester the resulting CO2. The conventional technology for CO2 recovery from dilute flue gas after fuel combustion incurs substantial energy penalty and increases cost of electricity significantly. Approaches are therefore needed to develop low cost ...

    SBIR Phase I 2014 Department of Energy
  3. FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

    SBC: KYMA TECHNOLOGIES, INC.            Topic: 11b

    The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defect densities give rise to degraded performance and r ...

    SBIR Phase II 2014 Department of Energy
  4. GaAsSb/AlGaAsP Superlattice Polarized Electron Source

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: 41e

    The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a polarized electron beam intensity at least 20 times greater than produced by strained GaAs, which is us ...

    SBIR Phase II 2014 Department of Energy
  5. Development of a naNomaterial aNode for a low voltage proportional counter for neutron detection

    SBC: NanoTechLabs Inc.            Topic: 39h

    The objective of this technology transfer effort is to leverage technology developed at Savannah River National Laboratory (SRNL) to develop a portable proportional counter (PC) for neutron detection. NanoTechLabs Inc. (NTL) will develop a portable proportional counter for neutron detection utilizing nanostructured field emitters. Unlike traditional proportional counters, which are typically arran ...

    STTR Phase I 2014 Department of Energy
  6. Ion Implantation Processes in AlN for Wide Bandgap Semiconductor Power Devices

    SBC: Adroit Materials            Topic: 02a

    Current and next-generation power systems require power devices that operate at high voltages and high frequencies beyond the reliable operating limit of the present silicon- and silicon carbide-based power devices. The material properties of AlN permit power devices to operate at these extremes, promoting device shrinkage for automotive applications as well faster switching and more efficient pow ...

    STTR Phase I 2014 Department of Energy
  7. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase I 2014 Department of EnergyARPA-E
  8. Transformational GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: DEFOA0000941

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  9. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E

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