Award Data

AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to achieve full utilization of AlN for power electronics applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it ...

For sustained coal utilization for power generation, while addressing possible long-term global climate concerns, it is imperative to capture and sequester the resulting CO2. The conventional technology for CO2 recovery from dilute flue gas after fuel combustion incurs substantial energy penalty and increases cost of electricity significantly. Approaches are therefore needed to develop low cost ...

The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow stemming from thermal mismatch. The latter is particularly problematic as one attempts to grow device films on large area substrates. The high defect densities give rise to degraded performance and r ...

The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a polarized electron beam intensity at least 20 times greater than produced by strained GaAs, which is us ...

The objective of this technology transfer effort is to leverage technology developed at Savannah River National Laboratory (SRNL) to develop a portable proportional counter (PC) for neutron detection. NanoTechLabs Inc. (NTL) will develop a portable proportional counter for neutron detection utilizing nanostructured field emitters. Unlike traditional proportional counters, which are typically arran ...

Current and next-generation power systems require power devices that operate at high voltages and high frequencies beyond the reliable operating limit of the present silicon- and silicon carbide-based power devices. The material properties of AlN permit power devices to operate at these extremes, promoting device shrinkage for automotive applications as well faster switching and more efficient pow ...

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...