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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions

    SBC: The IIIAN Company, LLC            Topic: O107

    The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their optimal performance and reliability.Ka-band power transistors with>60% Power Added Efficiency (PAE) are not commercially available. The primary limitations to their manufacture are lack of mature process technology at major GaN foun ...

    SBIR Phase II 2011 National Aeronautics and Space Administration
  2. Nanowire Photovoltaic Devices

    SBC: Firefly Technologies            Topic: T301

    Firefly, in collaboration with Rochester Institute of Technology, proposes developing a space solar cell having record efficiency exceeding 40% (AM0) by the introduction of nanowires within the active region of the current limiting sub-cell. The introduction of these nanoscale features will enable realization of an intermediate band solar cell (IBSC), while simultaneously increasing the effective ...

    STTR Phase II 2011 National Aeronautics and Space Administration
  3. Adaptive Linear Parameter Varying Control for Aeroservoelastic Suppression

    SBC: MUSYN Inc            Topic: A107

    Adaptive control offers an opportunity to fulfill present and futureaircraft safety objectives though automatedvehicle recovery while maintaining performanceand stability requirements in the presence of unknown orvarying operating environment.Future aircraft are a natural application of adaptive control. Theseaircraft will be more fuel efficient, have longer operating ranges thoughmore flexible ai ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  4. Radiation Hard Electronics for Advanced Communication Systems

    SBC: ICS LLC            Topic: O102

    Advanced reconfigurable/reprogrammable communication systems will require use of commercial sub 100 nm electronics. Legacy radiation tolerant circuits fail to provide Single Event Upset (SEU) immunity at speeds greater than 500 MHz. New base level logic circuits are needed to provide SEU immunity for high speed circuits afforded by sub 100 nm technology. A completely new circuit and system appr ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  5. Uncooled High-Performance InAsSb Focal Plane Arrays

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: S104

    SVT Associates proposes an innovative digital alloy technique to extend the cutoff wavelength of InAsSb beyond 5 um, a wider band gap InAlAsSb layer inserted into depletion region to suppress dark current, and atomic layer deposition technique to coat radiation-hard material AlN on InAsSb detectors grown on GaSb substrate. This digital alloy InAsSb material system is capable of infrared detection ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  6. High-Efficiency GaN-Based UV Imaging Photocathodes for Application in Harsh Environments

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: S105

    This proposal is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors for reliable operation at high temperature and high radiation environments for future NASA missions near the Sun and in deep atmospheres of Venus and Jupiter. The proposed work includes the incorporation of these photocathodes on Al2O3-based high-tem ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  7. Group III-Nitride LNAs for Microwave Radiometry

    SBC: The IIIAN Company, LLC            Topic: S103

    This phase I proposal addresses the need for microwave and millimeter wave Low Noise Amplifiers (LNAs) for remote sensing applications of the earth's atmosphere. In this work, IIIAN proposes using group III-nitride materials, specifically AlGaN/GaN HEMT structures, to fabricate LNAs for microwave radiometers operating from 165 GHz up to 270 GHz. The group III-nitrides have excellent physica ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  8. Acoustic Monitoring for Spaceflight Vehicle Applications

    SBC: ADVANCED MEDICAL ELECTRONICS CORPORATION            Topic: O306

    This SBIR will develop and demonstrate acoustic sensor technology enabling real-time, remotely performed measuring and monitoring of sound pressure levels and noise exposure levels in long-duration space vehicles. The acoustic sensor technology developed will enable a network of continuously monitored, real-time acoustic sensors providing sound pressure level information as a function of frequenc ...

    SBIR Phase I 2011 National Aeronautics and Space Administration
  9. FLAT PANEL MULTICOLOR DISPLAY BASED ON INTEGRATED OPTIC SCANNER

    SBC: Apa Optics, Inc.            Topic: N/A

    THE OVERALL OBJECTIVE OF THE PROPOSED EFFORT IS TO DEVELOP A LOW POWER, COMPACT MULTICOLOR, FLAT PANEL DISPLAY. OUR APPROACH IS BASED ON ILLUMINATING A 3-COLOR PHOSPHOR SCREEN WITH AN INFRARED SEMICONDUCTOR LASER DIODE AND SCANNING IT WITH AN INTEGRATED OPTICS BASED LOW POWER LASER SCANNER. APA OPTICS IS DEVELOPING A LASER SCANNER WHICH HAS NO MOVINGPARTS, IS VERY COMPACT, AND HAS THE POTENTIALS O ...

    SBIR Phase I 1990 National Aeronautics and Space Administration
  10. ATOMIC LAYER CVD OF YBACUO OVER A LOW DIELECTRIC SUBSTRATE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE THE DEPOSITION OF HIGH TC YBACUO LAYERS, USING ATOMIC LAYER CVD OVER A COMPOSITE ALXGA1-XAS/ALXGA1-XN/SAPPHIRE SUBSTRATE. THE UNIQUE ATOMIC LAYER PROCESS IS EXPECTED TO REDUCE THE EPITAXY TEMPERATURE WELL BELOW THAT REQUIRED FOR CONVENTIONAL MOCVD. THIS WILL ELIMINATE THE NEED FOR A POST DEPOSITION ANNEAL. OUR SUBSTRATE STACK IS ALSO UNIQUE. IT HAS A DIELECTRIC CONSTANT MUCH LOWER AND T ...

    SBIR Phase I 1990 National Aeronautics and Space Administration

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