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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Defect Reduction at the Silicon (112) Wafer Surface by Amorphization and Recrystallization
SBC: AMETHYST RESEARCH INC Topic: MDA11T002Silicon wafers oriented on (112) are the preferred substrates for deposition of mercury cadmium telluride layers by molecular beam epitaxy. Surface defects introduced during polishing of the wafers degrade the quality of the epitaxy and the performance of infrared detectors fabricated within these materials. We propose a process for reducing the density of the defects that are inherent in the si ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
The Use of Hydrogen for Defect Reduction in Large Format Infrared Detector Materials
SBC: AMETHYST RESEARCH INC Topic: MDA11T002Active defects negatively impact the performance of IRFPAs by increasing noise at various levels up to, and including, catastrophic degradation. Evidence indicates that"killer defects"are related to the interaction of open core screw dislocations with impurities that remain after substrate preparation, prior to HgCdTe growth. This impurity diffusion creates a conducting channel that shorts the j ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
High Operability HgCdTe Focal Plane Arrays on Si by Mitigation of Defects
SBC: AMETHYST RESEARCH INC Topic: MDA11T002For HgCdTe infrared focal plane arrays fabricated on Si substrates, a model has recently been proposed to account for the disparity between the density of failed pixels and the density of dislocations that are present in the HgCdTe junction region. The model distinguishes between active and inactive dislocations and offers a hypothesis that dislocations are active only when they intersect particul ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency