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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Electro-Optic Terminal Protection for Radar Systems
SBC: ARC TECHNOLOGY LLC Topic: MDA10T001Recent advances in directed energy weapons (DEW) require radar systems to implement front door protection against high power signals. Although nonlinear protection elements have been successfully employed in the past, fast ultra wideband (UWB) and high power microwave (HPM) signals are not successfully blocked by most current circuit protection technologies. This proposal details the develop ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
Modeling of Lithium-Ion Cell Performance
SBC: GLOBAL TECHNOLOGY CONNECTION, INC. Topic: MDA10T004Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...
STTR Phase I 2011 Department of DefenseMissile Defense Agency -
Development of a Truly Lattice-Matched III-Nitride Technology for
SBC: CERMET, INC. Topic: N/ACermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Growth of AlN Crystals
SBC: HEXATECH Topic: N/AThe objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates
SBC: CERMET, INC. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Development of III-V Nitride Diode Arrays for UV Imaging Applications
SBC: Nitronex Corporation Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency