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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  2. N/A

    SBC: Plastronic, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Plastronic, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  4. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Carbon Nanotubes for Electromagnetic Interference Shielding

    SBC: MATERIALS RESEARCH INSTITUTE, LLC            Topic: N/A

    This STTR Phase I Program will test a processing scheme for fabricating a polymer-based nanocomposite material with significant electrical conductivity for electromagnetic interference (EMI) shielding of electronic components and signal wires. The highconductivity of the nanocomposite material is introduced by a nanophase inclusion of a class of cost-effective vapor-grown carbon nanotubes. In th ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Band Gap Engineering of Advanced Photodetectors via Quantum Size Effects in SiC Nanostructures

    SBC: TAITECH, INC.            Topic: N/A

    The proposed research addresses the critical need for the development of an advanced sensor technology for ballistic missile defense applications. The proposal is aimed at investigating the unique physical processes which occur in wide band gap (WBG)semiconductor nanostructures due to quantum confinement effects. Silicon carbide, an attractive high-temperature, radiation hard semiconductor, whic ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Innovative Hardware Technologies for Electromagnetic Attack Rejection in Ballistic Missile Defense System (BMDS) Radars

    SBC: Imaging Systems Technology, Inc.            Topic: MDA10T001

    Under this STTR Imaging Systems Technology (IST) will apply novel Plasma-shell technology and expertise with gas plasma systems to shield and protect BMDS Radar. Plasma-shells are tiny hollow gas encapsulating shells. When energy is applied across the shell, the gas inside ionizes into a plasma. Theory of plasma-electromagnetic (EM) field interaction shows that, under appropriate conditions, pl ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  8. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  9. Low Defect Density Mercury Cadmium Telluride on Silicon by Bulk Layer Transfer

    SBC: SRICO INC            Topic: MDA11T002

    Mercury Cadmium Telluride (MCT) has been described as one of the most technologically significant semiconductor materials and is the most widely used material for long wave infrared (LWIR) imaging. The current challenge is to produce MCT over large focal plane array size at low cost and high reliability without compromising sensitivity or noise performance. MCT on silicon substrates is highly attr ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
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