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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Post Intercept Debris Predictions for Electro-Optical and Infrared (EO/IR) Scene Modeling

    SBC: CORVID TECHNOLOGIES, LLC            Topic: MDA12T005

    Corvid Technologies is pleased to offer this STTR Phase II proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory (JHU/APL), Spectral Sciences Inc. and Torch Technologies. Capabilities from each collaborator are being combined toward the ability to perform accurate, fast-running electro-optical and infrared (EO/IR) signature predictions. This collaborative effort ...

    STTR Phase II 2014 Department of DefenseMissile Defense Agency
  2. Reconfigurable Course-Grain Analog Arrays

    SBC: Triad Semiconductor, Inc.            Topic: MDA08T007

    A radiation hardened via-configurable analog array (RHVCAA) is proposed to provide a rapid prototyping mixed signal platform for implementing radiation hardened and high performance custom analog system designs. In phase I the feasibility of implementing RHVCAAs was investigated. Existing Triad semiconductor VCAA technology was assessed to determine modifications required to comply with radiation ...

    STTR Phase II 2010 Department of DefenseMissile Defense Agency
  3. In-Situ Monitoring during HVPE for the Producibility of Semi-Insulating GaN

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA09T001

    This program will utilize in-situ monitoring devices during the HVPE growth of GaN in conjunction with thermal and gas flow modeling, to establish tighter tolerances over growth variables such as substrate temperature and growth rate, which will lead to more robust, producible HVPE GaN growth processes, and in turn increase large area wafer yield and boule thicknesses. The in-situ monitoring dev ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  4. Software Defined Multi-Channel Radar Receivers for X-band Radars

    SBC: MAXENTRIC TECHNOLOGIES LLC            Topic: MDA09T003

    The United States Missile Defense Agency (MDA) is searching for a software-defined multi-channel radar receiver that would provide improved performance and added flexibility over currently deployed radar systems. In response, MaXentric is proposing a system codenamed MASR (Manycore Adaptive Software Radar). The MASR system is composed of a hierarchy of X-band front-ends, high-speed digitizers, F ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  5. Innovative Photonic Time Delay Units for Radar Applications

    SBC: S2 CORPORATION            Topic: MDA08T012

    We aim to build and demonstrate an innovative photonic true time delay solution which alleviates the fundamental problem of cascaded optical switches, and additionally offers several significant benefits. The device uses wideband spatial-spectral (S2) holographic optical memory materials to store and access several broadband time delay gratings. Broadband optical chirps are used to create these ti ...

    STTR Phase II 2010 Department of DefenseMissile Defense Agency
  6. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA09T001

    SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  7. Development for Radiation Hardened Advanced Electronic Circuits

    SBC: United Silicon Carbide, Inc.            Topic: MDA09T006

    In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based on a novel yet simple design SiC transistor that has the potential to provide a factor of 10X improvement in performance comparison to state-of-the-art. The SiC transistor can be fabricated by a subs ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  8. Weapons Typing Assessment via Spectrally Diverse Sensors and Air Sample

    SBC: SCITEC INC            Topic: MDA06T010

    The proposed work will extend the studies conducted during Phase I to an actual demonstration of weapons typing assessment using data available at the Command and Control, Battle Management, and Communications (C2BMC) X-Lab at the Joint National Integration Center (JNIC). The SciTec and JHU/APL team will develop a weapons typing assessment module for the Hit assessment, Weapons typing, and Kill A ...

    STTR Phase II 2007 Department of DefenseMissile Defense Agency
  9. New Rare-Earth-Doped Glass Fiber Lasers and Amplifiers for 1.54 um Communications

    SBC: KIGRE, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Development of III-V Nitride Diode Arrays for UV Imaging Applications

    SBC: Nitronex Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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