Award Data

Corvid Technologies is pleased to offer this STTR Phase II proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory (JHU/APL), Spectral Sciences Inc. and Torch Technologies. Capabilities from each collaborator are being combined toward the ability to perform accurate, fast-running electro-optical and infrared (EO/IR) signature predictions. This collaborative effort ...

"A drastic reduction in structural weight is an indispensable prerequisite to realize future Theater High Altitude Area Defense (THAAD) systems. Boost Defense segments of the program such as the Airborne Laser (ABL) and Space-Based Laser (SBL) require thestorage and transport of large amounts of cryogens. All elements contributing to the cryogenic system mass must be as light as possible. Advanc ...

"The objective of this proposal is the fabrication of AlN substrates with single crystalline quality meeting or exceeding the standards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure, and asteep temperature gradient, yields high-purity AlN single crystals at commercially interesting growth rates by sublimation of AlN in a nitrogen ...

"The objective of this proposal is to demonstrate the feasibility of large-area aluminum nitride (AlN) wafers for III-nitride substrate applications. The growth strategy consists of growing single crystalline AlN on adequately prepared SiC templates using asublimation process. We propose to employ a multi-step deposition process to (1) avoid SiC decomposition, (2) prepare the SiC seed surface for ...

"The objective of proposed research is to develop a commercially viable process for ammonothermal growth of gallium nitride (GaN) crystals suitable for fabrication of GaN wafers. The ammonothermal crystal growth method is modeled after the very successfulprocess of synthesizing alpha-quartz in supercritical water. In this process, a mineralizer attacks bulk nutrient to generate anions that are sol ...

"Kyma Technologies and NCSU will collaborate to produce ohmic contacts to single crystal gallium nitride (GaN) substrates. We propose to develop metallization schemes for ohmic contacts to GaN substrates for device fabrication. This will be of the utmostimportance for producing devices with a vertical device structure on a native gallium nitride substrate. Gallium nitride devices produced on sa ...

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