Award Data

Corvid Technologies is pleased to offer this STTR Phase II proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory (JHU/APL), Spectral Sciences Inc. and Torch Technologies. Capabilities from each collaborator are being combined toward the ability to perform accurate, fast-running electro-optical and infrared (EO/IR) signature predictions. This collaborative effort ...

Programs such as Airborne Laser and Space-Based Laser require highly mass efficient structures. Because of their high specific strength and stiffness this naturally leads to graphite fiber reinforced polymer (GFRP) materials for many system components. In fluid storage tank applications GFRP laminates often develop microcracking when subject to cryogenic temperatures and/or stresses due to press ...

Programs such as Airborne Laser and Space-Based Laser require highly mass efficient structures. Because of their high specific strength and stiffness this naturally leads to graphite fiber reinforced polymer (GFRP) materials for many system components. In fluid storage tank applications GFRP laminates often develop microcracking when subject to cryogenic temperatures and/or stresses due to press ...

Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

The output power and power added efficiency are the key performance parameters of modern transmitter/receiver (T/R) modules. The optimization of these parameters depends mostly on the RF characteristics of the active elements used in the T/R module output stages. GaAs FETs and HFETs that are currently used do not allow for high drain bias and large input signal swings. Power combining elements res ...

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