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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Post Intercept Debris Predictions for Electro-Optical and Infrared (EO/IR) Scene Modeling

    SBC: CORVID TECHNOLOGIES, LLC            Topic: MDA12T005

    Corvid Technologies is pleased to offer this STTR Phase II proposal in collaboration with The Johns Hopkins University Applied Physics Laboratory (JHU/APL), Spectral Sciences Inc. and Torch Technologies. Capabilities from each collaborator are being combined toward the ability to perform accurate, fast-running electro-optical and infrared (EO/IR) signature predictions. This collaborative effort ...

    STTR Phase II 2014 Department of DefenseMissile Defense Agency
  2. Coherent Distributed Aperture Enabled Active Electronically Steered Array (CDA-AESA)

    SBC: Applied Radar, Inc.            Topic: MDA07T011

    Missile threats faced by our country are constantly increasing in lethality. The weapon used to counter such missiles is the kinetic interceptor. To work effectively, the reentry vehicle (RV) location must be precisely known. Confusing objects within the reentry complex make the key discrimination process very difficult. Coherent distributed aperture (CDA) radar represents an important advance in ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  3. Coherent Distributed Aperture Enabled Active Electronically Steered Array (CDA-AESA)

    SBC: Applied Radar, Inc.            Topic: MDA07T011

    Our missile defense capability crucially depends on radar performance to detect, track and discriminate hostile targets. New radar designs being developed offer enhanced capability. However, a significant impediment to the deployment of these new radars is the high cost of active electronically scanned arrays (AESAs) and in particular the antennas upon which they are based. Together with our inter ...

    STTR Phase I 2007 Department of DefenseMissile Defense Agency
  4. Data Driven Prognostics (Hybrid Nano-scale/Microscale Composites for Deep Thermal Cycle Damage Resistance)

    SBC: Firehole Technologies, Inc.            Topic: N/A

    Programs such as Airborne Laser and Space-Based Laser require highly mass efficient structures. Because of their high specific strength and stiffness this naturally leads to graphite fiber reinforced polymer (GFRP) materials for many system components. In fluid storage tank applications GFRP laminates often develop microcracking when subject to cryogenic temperatures and/or stresses due to press ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  5. Data Driven Prognostics (Hybrid Nano-scale/Microscale Composites for Deep Thermal Cycle Damage Resistance)

    SBC: Firehole Technologies, Inc.            Topic: MDA03T001

    Programs such as Airborne Laser and Space-Based Laser require highly mass efficient structures. Because of their high specific strength and stiffness this naturally leads to graphite fiber reinforced polymer (GFRP) materials for many system components. In fluid storage tank applications GFRP laminates often develop microcracking when subject to cryogenic temperatures and/or stresses due to press ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  6. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  7. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: BMDO02T00

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  8. Development of 4 inch Semi-Insulating Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA04T018

    High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  9. Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  10. Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts

    SBC: KYMA TECHNOLOGIES, INC.            Topic: BMDO02T00

    The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
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