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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. A Novel Cost Effective Method for Growing High Performance Radiation Sensors

    SBC: Radiation Monitoring Devices, Inc.            Topic: DTRA082007

    Certain lanthanide halides have significantly higher light output than NaI:Tl, the comparison standard for scintillators, plus other important properties, including fast decay times and excellent proportionality. Unfortunately, lanthanide halides grown by traditional melt processes have high production costs and limited availability. Crystals are usually limited to about 5 cm x 5 cm, right cylinde ...

    SBIR Phase II 2010 Department of DefenseDefense Threat Reduction Agency
  2. Electromagnetically-Stirred THM Process for Growth of CZT

    SBC: CAPESYM, INC            Topic: DTRA092007

    It is proposed to develop a novel process for growth of high quality CZT crystals for nuclear detection applications. Currently the THM process is the technology of choice for production of high quality CZT crystals. This process, however, suffers from extremely low growth rates. The development effort proposed here will seek to increase the crystal growth rate by 5-10 times the current levels ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  3. Characterization and Mitigation of Radiation Effects in Quantum Dot Based Nanotechnologies

    SBC: CFD Research Corporation            Topic: DTRA082001

    For applications in DoD satellite systems, devices based on novel nanomaterials offer significant advantages over traditional technologies in terms of light-weight and efficiency. Examples of such novel devices include quantum dot (QD) based solar cells, photodetectors, radars and sensors. However, the response of these devices to radiation effects is not well understood, and radiation effects mod ...

    SBIR Phase II 2010 Department of DefenseDefense Threat Reduction Agency
  4. Characterization and Mitigation of Radiation Effects in Nonplanar Nano-technology Microelectronics

    SBC: CFD Research Corporation            Topic: DTRA092001

    Future high-performance integrated circuits in DoD satellite systems will require non-planar nano-technology devices, such as MultiGate Field Effect Transistors (MuGFET) or FinFET, which can decrease pattern area of logic circuits below 50% of the conventional planar technologies. The International Technology Roadmap for Semiconductors predicts that such devices will be the cornerstone of sub-32nm ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  5. An Integrated, Electrokinetics-Augmented Microfluidic Device for Forensic DNA Analysis

    SBC: CFD Research Corporation            Topic: DTRA092003

    The use of WMDs and IEDs by covert insurgents and terrorists poses a significant risk to U.S. military forces and civilians. The capability to execute rapid forensic DNA analysis to identify individuals who manufactured and transported these threatening devices is of paramount importance to military mission, homeland security and civilian safety. Current DNA forensic analyses are time-consuming, b ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  6. Electrokinetic-based Microfluidic Universal Sample-Preparation (EMUS) Platform

    SBC: CFD Research Corporation            Topic: DTRA092002

    Sample preparation has been recognized as the single most important challenge to be faced in the development of detect-to-warn (DTW) systems. Available commercial sample preparation technologies are expensive, slow, and require trained laboratory technicians and sophisticated laboratory equipment for operation. Addressing this need, we propose to design, fabricate, and demonstrate a general purpos ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  7. Next Generation Blast Simulation

    SBC: Reaction Engineering International            Topic: DTRA092015

    With the current state of world events, the threat of explosives used against high-value targets is more pronounced than ever before. As a result, simulation of blast events and their effects on structures has become an increasingly vital capability. Current blast simulations on Central Processing Units (CPU) resources require a significant amount of computational time, limiting their overall valu ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  8. Next Generation in Detection Materials Processing

    SBC: Neotron Inc            Topic: DTRA092007

    Three nuclides are especially useful in detecting thermalized neutrons: helium-3, lithium-6 , and boron-10. Since current demand will deplete reserves of helium-3 in roughly two years, there is a large desire to develop detectors that have the capacity to replace helium-3 tubes. In this proposal we spell out our plan to adapt Neotron''s already developed fission neutron detector into a high effic ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  9. Weapon Payloads for Bulk Chemical and Biological Agent Neutralization

    SBC: Integrated Solutions For Systems, Inc.            Topic: DTRA092012

    Current offensive solutions to neutralize chem/bio agent facilities rely on blast and/or short-burst high-temperature neutralization but have the potential to produce severe collateral damage via agent release. Our team proposes the Dispersed Energetics Coupled for Optimized Neutralization (DECON) Concept, an alternative concept to perform bulk neutralization of agents. The DECON concept can be s ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  10. ION BEAM DEPOSITED FERROELECTRIC MEMORY FILMS

    SBC: EIC LABORATORIES, INC.            Topic: N/A

    COMPUTER MEMORY ARRAYS ARE EXTREMELY VULNERABLE TO ELECTROMAGNETIC DISTURBANCES RESULTING FROM ACCIDENTAL OR HOSTILE ACTIONS. HARDENING AGAINST SUCH EFFECTS CAN BE IMPARTED EITHER BY ADDING EXTERNAL PROTECTION TO EXISTING SYSTEMS OR BY INCORPORATING SURVIVABILITY IN NEW DESIGNS. INHERENT HARDNESS CAN BE IMPARTED TO RANDOM ACCESS MEMORY ARRAYS BY USING THIN FILM FERROELECTRIC MATERIALS AS MEMORY EL ...

    SBIR Phase II 1993 Department of DefenseDefense Threat Reduction Agency

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