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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Nitride, Carbide and Non-Oxide In Situ Coatings Using RECVD,A New CVD Method

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Currently, thermal spray (flame and plasma spray) is the only single step method of applying most metal and non-oxide ceramic coatings to large objects. These coatings are usually of a low quality, and thin films cannot be applied. An in situ deposition technique that inexpensively and easily applies nitrides, carbides and other non-oxide thin or thick films in an environmentally friendly manner i ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  2. Low Cost CCVD Mullite and Alumina-Titania Interface Coatings for Ceramic Matrix Composites

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Nicalon fiber-reinforced SiC matrix composites owe their good mechanical properties at room temperature to either C or BN interfaces, which provide a weak interfacial bond. However, C and BN interfaces encounter oxidation problems at elevated temperatures in oxidizing environments resulting in degradation of mechanical properties. Recent efforts to replace C and BN interfaces have identified alu ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  3. Low Temperature CMOS Integratable Ferroelectric Thin Film Process

    SBC: CCVD, Inc dba MicroCoating Technologies (MCT)            Topic: N/A

    Multi-component dielectric thin films suitable for solid state electronics have been deposited using various conventional chemical vapor deposition (CVD) techniques, including organometallic CVD, plasma enhanced CVD, and low pressure CVD. However, these approaches are difficult to integrate with standard silicon IC processing of ferroelectric DRAM and NVFRAM attributed to high deposition temperat ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Mechanically Strained, High Mobility, Strained-Si Devices

    SBC: INTEGRATED DATA SYSTEMS            Topic: N/A

    The aim of this effort is to inexpensively produce high performance strained-Si devices. The idea is to introduce strain into the Si lattice mechanically, and not via lattice mismatched, layered, heterostructures. Strain will be introduced by curving the ICs around a cylindrical packaging form. Using only standard fabrication techniques, integrated circuitry will be processed on thin single crysta ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency

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