You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High Current Vertical Photoconductive Semiconductor Switch (PCSS) and Trigger Subsystem

    SBC: Eureka Aerospace            Topic: DMEA231005

    Implementation of multiple parallel current-sharing filaments in high-voltage photoconductive semiconductor switches (PCSS) has been shown to be very effective in scaling the current handling capability of the devices. This approach increases the active current-switching area on the surface of the device to handle higher total current. In this effort, we will develop a vertical geometry PCSS that ...

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  2. Digital-Output Capacitive Accelerometers for High-G Applications

    SBC: INTERDISCIPLINARY CONSULTING CORP            Topic: DMEA231001

    In response to the 2023 DMEA SBIR Phase I solicitation topic DMEA231-001 titled High-G Accelerometers, the Interdisciplinary Consulting Corporation (IC2) proposes to develop a robust, real-time, tri-axis accelerometer using microelectromechanical systems (MEMS) technology that can provide accurate measurements in high-G environments and survive up to 60 kG. MEMS accelerometers have played a cruci ...

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  3. Ultra-Wideband, Low-Voltage, Low-power, Low Phase Noise CMOS Voltage Controlled Oscillator

    SBC: TERASPATIAL INC            Topic: DMEA231006

    This proposal is submitted in response to the DoD’s need for a low-power, US-sourced, ultra-wideband VCO designed to work over -55ºC to 125ºC, with high level of programmability and reconfigurability for different applications. This proposal describes a novel design that meet these requirements, building on more than 10 years of prior R&D in this area.

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  4. Supply Chain Development of Thick SiC Epi-Wafers and 20 kV Class Transistors

    SBC: MAINSTREAM ENGINEERING CORP            Topic: DMEA231D02

    SiC IGBT devices remain restricted from achieving higher voltage operation due the lack of a supply chain (onshore or otherwise) for thick n-channel epitaxial wafers. Some researchers have reported success in improving SiC to accommodate higher voltage IGBTs. However, commercial exploitation of this knowledge has not occurred due to a much larger market for moderate voltage transistors. Detailed f ...

    SBIR Phase II 2023 Department of DefenseDefense Microelectronics Activity
  5. Automated Measurement of Passive Devices in Printed Circuit Assemblies

    SBC: A.T.E. SOLUTIONS, INC.            Topic: DMEA231008

    Passive components, such as resistors, capacitors and inductors, present a unique complication when reverse engineering is attempted.  Automated measurements of device values on populated printed circuit boards  - resistance, capacitance and inductance - is complicated by the network effect of neighboring components connected to the component being measured.  Some solutions are applicable to s ...

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  6. Thermo-plastically Formed Resonator Clocks for Ultra High Shock Environments

    SBC: Tanner Research, Inc.            Topic: DMEA231002

    One advanced material found to survive high G-forces and also is defect and grain-size free is thermos-plastic formed (TPF) Bulk Metallic Glasses (BMG). Unlike MEMS-based silicon components which often do not survive high-G, high shock environments, Tanner Research and Yale University have successfully demonstrated thermos-plastic formed (TPF) Bulk Metallic Glass (BMG) use as an alternative materi ...

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  7. High-G Clock Source

    SBC: Esc Aerospace US, Inc            Topic: DMEA231002

    At the center of most operational systems is TIME. Time enables us to communicate, to synchronize, to control, and to position. An accurate, reliable, low size, weight and power timing source is critical to our esc Aerospace PNT solution NavXTM for accurate and reliable PNT in total GPS denial. However, it is equally critical in a vast number of military and commercial applications. Historica ...

    SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity
  8. High Voltage and Speed SiC MOSFETs through Improved Gate Dielectric Interfaces

    SBC: MAINSTREAM ENGINEERING CORP            Topic: DMEA221D01

    Development of high voltage gated semiconductor device process that leverages the enhanced power handling capability of SiC, and remediates the undesirable effects (threshold voltage instability, increased interface capacitance) associated with native SiO2 growth from commercially available 4H-SiC and 6H-SiC polytypes. The process improvement and resultant performance enhancements gained will be v ...

    SBIR Phase II 2022 Department of DefenseDefense Microelectronics Activity
  9. A TEM-Based Thermal and Electronic Imaging System

    SBC: NANOELECTRONIC IMAGING, INC.            Topic: DMEA192001

    The transmission electron microscope (TEM) is the standard high resolution tool for imaging microelectronics. Despite its impressive sensitivity to physical structure (the type, number, and arrangement of atoms), TEM is remarkably inept at detecting electronic and thermal signals, even when equipped with expensive spectroscopic attachments. Electronic and thermal structure determines device functi ...

    SBIR Phase II 2021 Department of DefenseDefense Microelectronics Activity
  10. Intelligent Automatic Serial Sectioning using Ultra Short Pulse Laser Polygon Scanning

    SBC: AEROCYONICS, INC.            Topic: DMEA211002

    Serial sectioning of microelectronics, as needed for performing destructive, high-resolution reverse engineering and   failure analysis, faces several challenges, due to the ever-growing miniaturization of features of interest. Some of these challenges are as follows: (1) Current methods of delayering require access to multiple pieces of mechanical equipment such as semi-automated polishing mach ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
US Flag An Official Website of the United States Government