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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Infrared Detectors Using Mercury Manganese Telluride
SBC: BRIMROSE CORPORATION OF AMERICA Topic: N/AIn the proposed research we will investigate methods for improving the performance of very long wavelength infrared (VLWIR) photovoltaic detectors fabricated from Hg1-xMnxTe. This material was chosen because Hg1-xMnxTe has been shown to have superior mechanical, chemical and thermal stability compared Hg1-xCdxTe. During previously SBIR-BMDO funded work, Brimrose Corporation successfully fabricate ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
InP Solar Cell on Porous Silicon for Improved Solar Energy Conversion
SBC: BRIMROSE CORPORATION OF AMERICA Topic: N/ABrimrose Corporation has developed a novel low-temperature and low energy ion-beam assisted growth process for minimizing the problems and improving the quality of the hetero epitaxial films of III-V compound semiconductors on foreign substrates such as silicon, germanium, etc. The improvement in the quality of hetero epitaxial InP/Si films will be achieved by using this novel low temperature grow ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
AlxGa(1-x)N Solar Blind Detector Material Device Structure Growth & Evaluation
SBC: BRIMROSE CORPORATION OF AMERICA Topic: N/APhase I technical objectives of Brimrose Corporation are two fold. They are: 1) Epitaxial growth of AlxGa1-xN solar blind detector material device structure on new lattice and thermal matched substrates and evaluation of the material properties. The film growth will be carried out in Brimrose Corporation's 'Novel' ECR MOMBE Reactor using rare earth permanent magnets; 2) Preliminary epitaxial growt ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Optical Power Limiters
SBC: BRIMROSE CORPORATION OF AMERICA Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Neural Geometric Engine Using Cortical Information Processing
SBC: COMPUSENSOR TECHNOLOGY CORP. Topic: N/ACST proposes research and development of an artificial neural geometric engine designed according to a Lie group model of cortical visual information processing that can rapidly determine affine difference between two images. Computing parameters of geometric transform, such as scale, rotation, shear, shift, are considered as "inverse problem" in computer vision. The currently available warping an ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
EB Curing of VARTM Fabricated Maritime Composite Structures
SBC: DAMILIC Corporation Topic: N/ADAMILIC and others have already demonstrated that EB cured composite structures have mechanical properties comparable to those of a standard thermally cured part. The objective of this Phase I program has is to demonstrate that standard, commercially available, resin transfer molding techniques can be combined with the high speed electron beam process to produce maritime structures and higher spe ...
SBIR Phase I 1996 Department of DefenseSpecial Operations Command -
Nonequilibrium Electron Transport in InP Based Hybrid Heterojunction
SBC: EPITRONICS CORP. Topic: N/AInP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it is desirable to utilize structures that have been designed to promote high levels of nonequilibrium electron transport as this allows realization of higher electron velocities than possible for diffus ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Microcryocooler for Wafer Scale Integration with Sensors
SBC: General Pneumatics Corporation Topic: N/ACRYOCOOLER MICROELECTROMECHANICAL MICRODYNAMICS INTEGRATED GENERAL PNEUMATICS CORP'S PRELIMINARY DESIGN FOR EMPLOYING MICRODYNAMICS TO PRODUCE MICROELECTROMECHANICAL CLOSED-CYCLE CRYOCOOLERS USING SILICON PROCESSING TECHNIQUES WILL BE USED FOR MAKING INTEGRATED CIRCUITS IN PHASE 1. MICROMINIATURE COOLERS WILL BE INTEGRATED AT THE WAFER SCALE WITH A WIDE VARIETY OF SENSORS AND OTHER COLD ELECTRONIC ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
Integration of 3D Camera and 3D Display Technologies
SBC: TECHNEST, INC. Topic: N/AUnder separate efforts in the past, our team has developed technologies for a novel high speed 3D Camera and a true volumetric 3D display device. The unique features of our 3D Camera include the capability of providing instantaneous, full frame 3D range images at a CCD camera's frame rate (30 frames per second or faster), a capability that no other currently available 3D image acquisition systems ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
Band-Gap Engineered Varistors
SBC: Angstrom Devices, Inc. Topic: N/ASolid-state electronic devices are often subjected to high voltage transients generated by switching, lightning, or electrostatic discharge. These transients can cause mission critical components to fail. Varistors are increasingly used to avoid such failures. The current varistor devices, however, are not well suited for high frequency applications and the increasing trend towards device miniatur ...
SBIR Phase I 1996 Department of DefenseMissile Defense Agency