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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. Superconductor Magnetic Memory

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. Efficient Dopant Activation In P-type III-V Nitrides

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. FERROELECTRIC HETEROSTRUCTURES FOR HIGH-DENSITY DRAMS

    SBC: ADVANCED FUEL RESEARCH, INC.            Topic: N/A

    The innovations of the proposed program are: 1) advancing thin-film deposition technology to achieve fully epitaxial growth of ferroelectric heterostructures on silicon substrates, by using the highly successful pulsed laser deposition (PLD) technique; 2) replacing the Pt bottom electrode with the epitaxial conductive oxide material; 3) achieving a full monolithic integration of high-density ferro ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTIONS ON SILICON SUBSTRATES FOR RF COMMUNICATIONS

    SBC: ADVANCED FUEL RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. Optic Bistable Device with Low Threshold-Intensity (mw/cm2)

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    BRIMROSE CORPORATION PROPOSES TO INVESTIGATE, DESIGN AND DEMONSTRATE A NOVEL OPTICAL BISTABLE DEVICE WITH A THRESHOLD OPTICAL INTENSITY SEVERAL ORDERS OF MAGNITUDE LOWER THAN THE CONVENTIONAL DEVICES. THIS DEVICE WILL OPERATE AT ROOM TEMPERATURE USING A LOW POWER CW LASER. ADVANTAGE OF SUCH A DEVICE WILL SIGNIFICANTLY FACILITATE THE NUMBER OF PROCESSING OPERATIONS IN OPTICAL COMPUTING AND SIGNAL P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. Long Wave IR HgZnTe

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    IR DETECTOR MATERIAL, MERCURY CADMIUM TELLURIDE HAS BEEN THE MOST MATURES AND OFTEN A MATERIAL OF CHOICE FOR ADVACNED INFRARED DETECTION. HOWEVER, IT IS EXTREMELY DIFFICULT TO PRODUCE THE MATERIAL FOR DETECTION AT A WAVELENGTH GREATER THAN 14um. THIS PROBLEM IS DUE TO EXCCESSIVE FUNNELLING AND SURFACE LEAKAGE RELATED TO DARK CURRENTS. IN RECENT YEARS MERCURY ZINC TELLURIDE (MZT) HAS EMERGED AS A S ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. TUNABLE HOLOGRAPHIC FILTER

    SBC: CIENCIA INC            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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