Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Ferroelectric Capacitors for Pulse Power Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERA ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  2. Blue-Green LED Arrays for Scanned Linear Array Imaging

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Virtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. High Dielectric MOSFET Oxides on SiC

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Increasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Edge-emitting Nitride-based Bragg Reflector Lasers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    In this program we will develop narrow linewidth AlGaN Bragg reflector lasers suitable as injection seeds for solid-state W lasers in the range of 280 to 330 nm. These systems are compact, light weight, and low-power consuming and ideal for airborne lidar systems. Bragg reflector lasers have never been fabricated in the nitrides so in this Phase I program we will develop the technologies necessary ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Solar-blind GaN p-I-n UV Photodiodes

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Photodiodes have high efficiency since the absorption region thickness is large. However, no GaN p-i-n photodiodes have been reported due to the difficulty in achieving low background doped GaN. This Phase I program seeks to determine the increase in quantum efficiency achievable by the use of a thick intrinsic layer inserted in the p-n junction to increase the absorption region thickness. In addi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Epi-ready SiC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Improved Silicon on Insulator (SOI) Manufacturing Technology for Low Power, High Speed, Radiation Hard Devices

    SBC: Advanced Fuel Research, Inc.            Topic: N/A

    SOI technology offers the potential for creating radiation hard integrated circuits which can operate at low power and high speed. These advances are important for DoD and space applications and for battery operated devices. SOI is excellent for rad-hard applications because dielectric isolation of active circuitry from the supporting substrate by the Buried OXygen (BOX) layer enhances resistance ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Microscopic Batteries for Use in MEMs

    SBC: BIPOLAR TECHNOLOGIES            Topic: N/A

    One of the limiting factors in the operation of MEMS is energy transmission and storage. It is often necessary to transmit energy for a MEMS from some external source into the circuit, thereby suffering power losses which can be significant. The reduction of the power losses is therefore a desirable goal. The purpose of this work is to develop and build microscopic batteries (0.0001 cm2) which can ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  9. Novel Synthesis of Fluorinated Parylenes for Low-K Interlayer Dielectric Applications in Submicron ICs

    SBC: Brewer Science Incorporated            Topic: N/A

    As IC manufacturers pursue larger wafer sizes and smaller device features (0.25 um), the interlayer dielectric material becomes critical . Current interlayer dielectric materials, inorganic oxides and spin-coated polymeric materials, have serious deficiencies (e.g.,k >3, water absorption, and spin coating defects). This has led IC manufacturers to search for low-k($6000/lb) has hampered commercial ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Optical Power Limiters

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Brimrose proposes to produce an improved material for optical power l miting at near infrared wavelengths to protect sensors against jamming and to build a prototype device. The proposed material, vanadium doped cadmium telluride, is relatively new and will be used to fabricate an electro-optic power limiter (EOPL). This approach of using a doped II-VI semiconductor for power limiting was first de ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government