Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  2. Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  3. Vandium Precursors for Semi-Insulating SiC Epilayers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Radiation hard, nonvolatile, NRDO memory elements

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Fabrication of ZrC, HfC, TaC-based Fibrous Monolithic Ceramics for Rocket Propulsion Systems

    SBC: Sensintel Inc.            Topic: N/A

    The goal of this program is to develop a low cost, flexible manufacturing method for the production of high temperature ceramic composites for rocket propulsion systems. The matrix materials selected for this program will be ZrC, HfC, and TaC. These-materials have good oxidation/corrosion and ablation resistance at elevated temperatures, but typically do not possess the thermal shock resistance an ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. Bottom Anti-Reflective Coatings (BARCs) for 193 nm Lithography

    SBC: Brewer Science Incorporated            Topic: N/A

    A long-standing trend in the integrated circuit industry is to reduce pattern geometries on semiconductor substrates. To continue this trend, the next exposure wavelength after on-going deep-ultraviolet (248 nm) will be 193 nm. This SBIR Phase I program will identify and develop thermosetting bottom anti-reflective coatings (BARCs) meeting requirements for use with 193 nm unilayer resists. A serie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. Development of Uncooled Microbolometer Arrays for IR Imaging

    SBC: Brewer Science Incorporated            Topic: N/A

    Ion-implanted, thin polymer films exhibit a large temperature coefficient of resistance which suggests their application in microbolometer arrays used for infrared ( IR) imaging and temperature mapping. Compared to current microbolometer designs which require a series of difficult deposition steps, an ion-implanted polymer-based device requires only a single layer which can be applied by spin coat ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  8. Cascaded Cryogenic Flexible Loop Heat Pipes (P12-2511)

    SBC: DYNATHERM CORP.            Topic: N/A

    Future spacecraft will require efficient heat transport at 60K Or lower, and will require flexible and thermal diode features. Cryogenic flexible heat pipes and capillary pumped loops have been developed, but are not capable of adverse tilt operation and rapid, autonomous startup. Loop heat pipes with advanced fine pore evaporator wicks show promise for meeting future needs, provided that rapid, a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  9. Electroluminescent Nanocrystal/Quantum Dot Based Phosphors

    SBC: E-LITE TECHNOLOGIES, INC.            Topic: N/A

    This proposal aims to develop quantum-dot based nanophosphors, using cladded and doped nanocrystals. These high-efficiency and fast response (nanoseconds) phosphors will be utilized in Phase II for the fabrication of full color, flexible, flat panel displays and illuminators, utilizing self-assembly techniques. Doped nanocrystals have demonstrated enhanced photolurninescence (e.g. quantum efficie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Novel Auger Transistors

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop innovative material structures for Auger transistors that can be used for millimeterwave oscillators. We will achieve this objective by performing device designs to determine suitable material structures and epitaxial growth processes. The primary goal of this proposed Phase I effort is to demonstrate the feasibility of Auger transistors by developing te ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
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