Award Data

We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

This proposal presents a program for developing a novel patterning system technology that not only delivers submicron resolution over a large image field, but also produces high exposure throughput and eliminates the shortcomings of conventional systems. The new technology is highly attractive in the fabrication of semiconductor integrated circuits and flat-panel displays. Phase I will design a sy ...

One of the limiting factors in the operation of MEMS is energy transmission and storage. It is often necessary to transmit energy for a MEMS from some external source into the circuit, thereby suffering power losses which can be significant. The reduction of the power losses is therefore a desirable goal. The purpose of this work is to develop and build microscopic batteries (0.0001 cm2) which can ...

As IC manufacturers pursue larger wafer sizes and smaller device features (0.25 um), the interlayer dielectric material becomes critical . Current interlayer dielectric materials, inorganic oxides and spin-coated polymeric materials, have serious deficiencies (e.g.,k >3, water absorption, and spin coating defects). This has led IC manufacturers to search for low-k($6000/lb) has hampered commercial ...

Brimrose proposes to produce an improved material for optical power l miting at near infrared wavelengths to protect sensors against jamming and to build a prototype device. The proposed material, vanadium doped cadmium telluride, is relatively new and will be used to fabricate an electro-optic power limiter (EOPL). This approach of using a doped II-VI semiconductor for power limiting was first de ...

Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

Our proposed innovation advocates the use of well-known variable conductance heat pipe (VCHP) technology for cryogenic applications where temperature control of sensitive components is also required. IR sensors operating at cryogenic temperatures frequently require temperature control to plus or minus 1.0 degrees C while some applications demand finer control down to pluse or minus 0.1 degrees C. ...

Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...