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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. A High-Speed Full Frame Laser 3D Imager

    SBC: TECHNEST, INC.            Topic: N/A

    High-speed three-dimensional (3D) imaging of objects and targets is a very important functionality of advanced sensor systems in both military and civilian applications. This capability can provide many BMDO systems with a leapfrog performance advance in target detection, identification, classification, tracking, and kill determination. The 3D imaging techniques also have enormous commercial marke ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  2. Alternative Substrates for Materials Integration

    SBC: EPITRONICS CORP.            Topic: N/A

    The recent demonstration of twist bonded GaAs substrates offers the potential to develop universally compliant substrates upon which almost any III-V or related semiconductor can be grown without lattice mismatch induced defect formation. Compliant substrates would rapidly expand and improve a number of device applications, such as Sb-based detectors and a wide range of InGaAlAsP devices, which ar ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  3. A Novel Omni-directional 3D Camera for Battlefield Modeling

    SBC: TECHNEST, INC.            Topic: N/A

    To the best of our knowledge, there is no existing battle field modeling or reconnaissance technology that can provide both the real-time three dimensional (3D) range information and the omni-directional viewing capability at any cost. The primary objective of this project is to fill this gap, and to develop a high speed and low-cost 3D image sensor with an omni viewing angle (i.e., 360 degree) fo ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  4. Band-gap Engineered Visible Radiation Sensors

    SBC: Nanomaterials Research LLC            Topic: N/A

    Visible radiation detectors are enabling technology and are the basis for many military and commercial applications either in use or as proposed. Conventional sensors based on properties of Il-VI compounds are unfortunately temperature sensitive, time varying, and slow. This program seeks to overcome these limitations by developing visible radiation sensors from proprietary nanostructured material ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Bottom Anti-Reflective Coatings (BARCs) for 193 nm Lithography

    SBC: Brewer Science Incorporated            Topic: N/A

    A long-standing trend in the integrated circuit industry is to reduce pattern geometries on semiconductor substrates. To continue this trend, the next exposure wavelength after on-going deep-ultraviolet (248 nm) will be 193 nm. This SBIR Phase I program will identify and develop thermosetting bottom anti-reflective coatings (BARCs) meeting requirements for use with 193 nm unilayer resists. A serie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. Cascaded Cryogenic Flexible Loop Heat Pipes (P12-2511)

    SBC: DYNATHERM CORP.            Topic: N/A

    Future spacecraft will require efficient heat transport at 60K Or lower, and will require flexible and thermal diode features. Cryogenic flexible heat pipes and capillary pumped loops have been developed, but are not capable of adverse tilt operation and rapid, autonomous startup. Loop heat pipes with advanced fine pore evaporator wicks show promise for meeting future needs, provided that rapid, a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. CDTE OPTICAL COMPONENTS IN LONG WAVELENGTH INFRARED SYSTEMS

    SBC: Xacton Corp            Topic: N/A

    INFRARED SYSTEMS ARE NEEDED FOR A VARIETY OF DEFENSE RELATED APPLICATIONS, SUCH AS: SURVEILLANCE, TARGET DETECTION, ACQUISITION AND TRACKING, MISSILE GUIDANCE, ETC. FOR MANY APPLICATIONS SUCH AS THOSE INVOLVING COLD-DIM TARGETS, THESE SYSTEMS NEED TO OPERATE IN THE VERY LONG WAVELENGTH REGION OF THE INFRARED SPECTRUM, E.G. 15-35 MICRONS CUTOFF. IN THIS WAVELENGTH REGION, THE AVAILABILITY OF SUITAB ...

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  8. CRYOGENICALLY COOLED CONTROLLED SWITCH FOR SPACE POWER CONDITIONING

    SBC: Hmj Corp.            Topic: N/A

    A SOLID STATE SWITCH FOR OPERATION AT CRYOGENIC TEMPERATURE IS BEING DEVELOPED THAT WILL PROVIDE MULTI-MEGAWATT POWER CONDITIONING IN THE RAPIDLY EXPANDING FIELD OF LOW TEMPERATURE ELECTRONICS. SINCE EXISTING CONTROLLED SWITCHES ARE NOT DIRECTLY SUITABLE FOR CRYOGENIC OPERATION, ONLY A FUNDAMENTAL APPROACH CAN DEVELOP STRUCTURES CAPABLE OF LOW LOSS AND RELIABLE OPERATION IN THE TEMPERATURE RANGE B ...

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  9. Development of AlGaN/SiC Epitaxial Wafers

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    We propose to develop AlGaN/SiC epitaxial wafers to be used as substrates for III-V nitride homoepitaxy. Lack of GaN and AIN substrates for homoepitaxy limits the development of electronic devices based on III-V nitrides. TDI has demonstrated that thin (~0.5 Sun) high quality GaN layers can be grown on silicon carbide wafers by hydride vapor phase epitaxy (HVPE). These structures, consisting of a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Development of silicon carbide epitaxial wafers with reduced micropipe density

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    In this project Technologies and Devices International, Inc. (TDI) proposes-to develop silicon carbide (SiC) substrate material with reduced micropipe density. Our recent testing has demonstrated that micr( pipe density in SiC commercial wafers can be significantly reduced by filling micropipe channels in these wafers using a new SiC epitaxial approach After filling the micropipe in the initial wa ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
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